TXEAPDSANF-19.200000,GPS定位导航晶振,VCTCXO晶振,Taitien泰艺晶振
频率:19.2 MHz
尺寸:3.20mm x 2.50mm
TXEAPDSANF-19.200000,GPS定位导航晶振,VCTCXO晶振,Taitien泰艺晶振
针对便携式GPS定位系统晶振设备(如手持终端,户外运动手表)对功耗的严苛要求(通常需支持数天至数周续航),Taitien研发团队对TXEAPDSANF-19.200000晶振的内部电路进行了深度优化,采用低功耗CMOS驱动芯片,将工作电流控制在3mA以下(待机电流仅0.5mA),相比同类型传统晶振功耗降低40%,在实现低功耗运行的同时,仍保持VCTCXO技术的高精度频率输出(频率稳定度±0.5ppm@-40℃~+85℃).19.200000MHz频率信号可直接接入主流GPS芯片,无需额外的频率转换电路,减少了信号转换过程中的损耗(信号衰减率低于1dB),既提升了设备续航能力(手持导航仪续航延长20%),又保障了定位精度(静态定位误差≤1米),适用于手持GPS导航仪(地质勘探专用设备),户外运动定位设备(登山,徒步专用手表),物联网定位终端(物流包裹追踪器)等场景,尤其适配电池供电的移动定位设备.
TXEAPDSANF-19.200000,GPS定位导航晶振,VCTCXO晶振,Taitien泰艺晶振
| 原厂型号 Originalmodel: | TXEAPDSANF-19.200000 | 品牌brand: | Taitien |
| Manufacturer品牌 | 台湾泰艺晶振 | OperatingTemperature温度 | -30°C ~ 85°C |
| Series型号 | TX | Current-Supply(Max) | 2mA |
| Type类型 | VCTCXO | PackageHeight高度 | 1.00mm |
| Frequency频率 | 19.2 MHz | Termination 脚位 | 4pad |
| 输出方式 Output: | Clipped Sine Wave | PackageType 封装类型 | 4-SMD |
| Voltage-Supply电压 | 2.8V ~ 3.3V | Packaging 包装 | TapeandReel |
| FrequencyStability频率稳定度 | ±1.5ppm | 安装方式 Installation: | Surfacemount |
| Size/Dimension尺寸 | 3.20mm x 2.50mm | 最小包装数MPQ: | 3000 |
TXEAPDSANF-19.200000,GPS定位导航晶振,VCTCXO晶振,Taitien泰艺晶振
TXEAPDSANF-19.200000,GPS定位导航晶振,VCTCXO晶振,Taitien泰艺晶振
| OCETGCJTNF-48.000000 | Taitien | OC | XO (Standard) | 48 MHz | CMOS | 3.3V | ±50ppm | -20°C ~ 70°C |
| OXETDCJANF-0.032768 | Taitien | OX | XO (Standard) | 32.768 kHz | CMOS | 3.3V | ±25ppm | -20°C ~ 70°C |
| OCETDLJANF-25.000000 | Taitien | OC | XO (Standard) | 25 MHz | CMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
| TZKTADSANF-26.000000 | Taitien | TZ | TCXO | 26 MHz | Clipped Sine Wave | 1.8V | ±500ppb | -30°C ~ 85°C |
| TXEABLSANF-24.000000 | Taitien | TX | VCTCXO | 24 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TXEABLSANF-26.000000 | Taitien | TX | VCTCXO | 26 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TXKTPCSANF-32.000000 | Taitien | TX | TCXO | 32 MHz | Clipped Sine Wave | 1.8V | ±1.5ppm | -20°C ~ 70°C |
| TXEAADSANF-20.000000 | Taitien | TX | VCTCXO | 20 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -30°C ~ 85°C |
| TXETALSANF-10.000000 | Taitien | TX | TCXO | 10 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -40°C ~ 85°C |
| TYETBCSANF-32.000000 | Taitien | TY | TCXO | 32 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -20°C ~ 70°C |
| TYETBLSANF-40.000000 | Taitien | TY | TCXO | 40 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TYEAPLSANF-40.000000 | Taitien | TY | VCTCXO | 40 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1.5ppm | -40°C ~ 85°C |
| TYETACSANF-26.000000 | Taitien | TY | TCXO | 26 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -20°C ~ 70°C |
| TYEAACSANF-38.400000 | Taitien | TY | VCTCXO | 38.4 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -20°C ~ 70°C |
| VLCUWCWTNF-100.000000 | Taitien | VLCU | VCXO | 100 MHz | Sine Wave | 5V | ±35ppm | -20°C ~ 70°C |
| TSEAALJANF-10.000000 | Taitien | TS | VCTCXO | 10 MHz | CMOS | 3.3V | ±500ppb | -40°C ~ 85°C |
| TWETALJANF-40.000000 | Taitien | TW | TCXO | 40 MHz | CMOS | 3.3V | ±500ppb | -40°C ~ 85°C |
| TWEAKLJANF-20.000000 | Taitien | TW | VCTCXO | 20 MHz | CMOS | 3.3V | ±280ppb | -40°C ~ 85°C |
| TTETKLJANF-10.000000 | Taitien | TT | TCXO | 10 MHz | CMOS | 3.3V | ±280ppb | -40°C ~ 85°C |
| TTEAKLJANF-10.000000 | Taitien | TT | VCTCXO | 10 MHz | CMOS | 3.3V | ±280ppb | -40°C ~ 85°C |
| TTETKLSANF-10.000000 | Taitien | TT | TCXO | 10 MHz | Clipped Sine Wave | 3.3V | ±280ppb | -40°C ~ 85°C |
| TSEATLJANF-10.000000 | Taitien | TS | VCTCXO | 10 MHz | CMOS | 3.3V | ±4.6ppm | -40°C ~ 85°C |
| TWETMCJANF-10.000000 | Taitien | TW | TCXO | 10 MHz | CMOS | 3.3V | ±100ppb | -20°C ~ 70°C |
| TTEAALJANF-50.000000 | Taitien | TT | VCTCXO | 50 MHz | CMOS | 3.3V | ±500ppb | -40°C ~ 85°C |
| NNENCLJNNF-10.000000 | Taitien | NN | OCXO | 10 MHz | CMOS | 3.3V | ±20ppb | -40°C ~ 85°C |
| NI-10M-2400 | Taitien | NI-10M-2400 | OCXO | 10 MHz | LVTTL | 5V | ±3ppb | -30°C ~ 70°C |
| NI-10M-2403 | Taitien | NI-10M-2400 | OCXO | 10 MHz | LVTTL | 5V | ±3ppb | -40°C ~ 85°C |
| NI-10M-2503 | Taitien | NI-10M-2500 | OCXO | 10 MHz | Sine Wave | 5V | ±3ppb | -40°C ~ 85°C |
| NI-100M-2900 | Taitien | NI-100M-2900 | OCXO | 100 MHz | Sine Wave | 12V | ±50ppb | -40°C ~ 85°C |
| NA-100M-6822 | Taitien | NA-100M-6800 | OCXO | 100 MHz | Sine Wave | 12V | ±100ppb | -40°C ~ 85°C |
| OCKTGLJANF-0.032768 | Taitien | OC | XO (Standard) | 32.768 kHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
| OCETGLJTNF-100.000000 | Taitien | OC | XO (Standard) | 100 MHz | CMOS | 3.3V | ±50ppm | -40°C ~ 85°C |
| TXETCLSANF-40.000000 | Taitien | TX | TCXO | 40 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2ppm | -40°C ~ 85°C |
| TXETDDSANF-16.000000 | Taitien | TX | TCXO | 16 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2.5ppm | -30°C ~ 85°C |
| TXETDCSANF-20.000000 | Taitien | TX | TCXO | 20 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2.5ppm | -20°C ~ 70°C |
| TXETBLSANF-40.000000 | Taitien | TX | TCXO | 40 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TXEABDSANF-32.000000 | Taitien | TX | VCTCXO | 32 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -30°C ~ 85°C |
| TXETDDSANF-30.000000 | Taitien | TX | TCXO | 30 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2.5ppm | -30°C ~ 85°C |
| TXETBLSANF-26.000000 | Taitien | TX | TCXO | 26 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TXEAPDSANF-19.200000 | Taitien | TX | VCTCXO | 19.2 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1.5ppm | -30°C ~ 85°C |
| TXEAPLSANF-40.000000 | Taitien | TX | VCTCXO | 40 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1.5ppm | -40°C ~ 85°C |
| TXEACDSANF-26.000000 | Taitien | TX | VCTCXO | 26 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2ppm | -30°C ~ 85°C |
| TXEACDSANF-20.000000 | Taitien | TX | VCTCXO | 20 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2ppm | -30°C ~ 85°C |
| TXETBLSANF-27.000000 | Taitien | TX | TCXO | 27 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TXETBLSANF-19.200000 | Taitien | TX | TCXO | 19.2 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TXETALSANF-26.000000 | Taitien | TX | TCXO | 26 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -40°C ~ 85°C |
| TXEAACSANF-40.000000 | Taitien | TX | VCTCXO | 40 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -20°C ~ 70°C |
| TXEAADSANF-25.000000 | Taitien | TX | VCTCXO | 25 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -30°C ~ 85°C |
| TYETBLSANF-38.400000 | Taitien | TY | TCXO | 38.4 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -40°C ~ 85°C |
| TYETBCSANF-50.000000 | Taitien | TY | TCXO | 50 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±1ppm | -20°C ~ 70°C |
| TYETACSANF-32.000000 | Taitien | TY | TCXO | 32 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -20°C ~ 70°C |
| TYETACSANF-20.000000 | Taitien | TY | TCXO | 20 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb | -20°C ~ 70°C |
| PYEUCJJANF-100.000000 | Taitien | FASTXO | XO (Standard) | 100 MHz | CMOS | 2.8V ~ 3.3V | ±20ppm | -40°C ~ 105°C |
| TWEAALSANF-10.000000 | Taitien | TW | VCTCXO | 10 MHz | Clipped Sine Wave | 3.3V | ±500ppb | -40°C ~ 85°C |
| TTETKLJANF-30.720000 | Taitien | TT | TCXO | 30.72 MHz | CMOS | 3.3V | ±280ppb | -40°C ~ 85°C |
| TTEAMCSANF-10.000000 | Taitien | TT | VCTCXO | 10 MHz | Clipped Sine Wave | 3.3V | ±100ppb | -20°C ~ 70°C |
| OYKTGLJANF-0.032768 | Taitien | OY | XO (Standard) | 32.768 kHz | CMOS | 1.8V | ±50ppm | -40°C ~ 85°C |
| OYETDLJANF-25.000000 | Taitien | OY | XO | 25 MHz | CMOS | 3.3V | ±25ppm | -40°C ~ 85°C |
| TXETDDSANF-19.200000 | Taitien | TX | TCXO | 19.2 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2.5ppm | -30°C ~ 85°C |
| TXETCLSANF-25.000000 | Taitien | TX | TCXO | 25 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±2ppm | -40°C ~ 85°C |
公司名:深圳市金洛鑫电子有限公司
联系人:茹红青
手机:13510569637
电话:0755-27837162
QQ号:657116624
微信公众号:CITIZENCRYSTAL
搜狐公众号:晶振石英晶振NDK晶振
邮箱:jinluodz@163.com
地址:深圳市宝安区41区甲岸路19号
相关的产品 / Related Products

- X1E000021012900,日产无源贴片晶振,爱普生工业应用晶振
- X1E000021012900,日产无源贴片晶振,爱普生工业应用晶振,作为无源贴片晶振,X1E000021012900在工业应用晶振中具备三大技术优势:其一,超低功耗与高安全性,无需内置驱动电路,静态功耗趋近于零,适配工业设备中电池供电的传感器模块,同时无内置电子元件,避免有源晶振因电路故障导致的设备停机风险,提升工业系统运行安全性,其二,抗干扰能力强,无电源噪声干扰,能减少工业环境中强电磁辐射,其三,成本与维护优势,结构简单,故障率低,相比工业级有源晶振,采购成本降低30%以上,同时减少设备后期维护频次与成本,适配工业设备长生命周期使用需求.

- TSX-3225晶振,无源晶体谐振器,小型化贴片晶振
- TSX-3225晶振,无源晶体谐振器,小型化贴片晶振,TSX-3225作为典型的无源晶体谐振器,相比有源晶振具备三大核心技术优势:其一,超低功耗特性,无需内置驱动电路,仅依赖外部振荡电路工作,静态功耗趋近于零,在电池供电设备(如智能穿戴,无线传感器)中,可将时序模块功耗降低至微安级,大幅延长设备续航,其二,成本与兼容性优势,结构相对简单,生产制造成本低于有源晶振,同时无需额外供电引脚,电路设计更简洁,可兼容各类MCU,RTC芯片的振荡接口,减少元件选型复杂度,其三,环境适应性强,无内置电子元件,抗高温,抗干扰能力更突出,适配工业车间,汽车电子等复杂环境.

- O125,0-J075-B-3.3-1-T1-LF,Jauch晶振,3.3V低电压晶振
- O125,0-J075-B-3.3-1-T1-LF,Jauch晶振,3.3V低电压晶振,O125,0-J075-B-3.3-1-T1-LF的3.3V低电压设计,在当前电子设备低功耗晶振趋势中具备三大核心优势,其一,多芯片兼容适配,3.3V是MCU,FPGA,无线通信芯片(如蓝牙,WiFi)的主流供电电压,无需额外电压转换电路即可直接匹配,简化系统设计,减少电压转换带来的功耗损耗与信号干扰,其二,续航能力优化,在电池供电设备(如智能穿戴,便携式传感器)中,3.3V低压供电可大幅降低晶振模块功耗,配合Jauch的低静态电流设计,能将设备续航时间延长20%-30%,解决高频晶振高功耗与设备长续航的矛盾,其三,电路安全性提升,低电压供电降低电路发热与静电风险,减少因电压过高导致的元件烧毁概率,尤其适配医疗电子,汽车电子等对电路安全性要求严苛的场景.
JLX-PD
金洛鑫产品系列
PRODUCT LINE
石英晶振
QuartzCrystal
- KDS晶振
- 爱普生晶振
- NDK晶振
- 京瓷晶振
- 精工晶振
- 西铁城晶振
- 大河晶振
- 村田晶振
- 泰艺晶振
- TXC晶振
- 鸿星晶振
- 希华晶振
- 加高晶振
- 百利通亚陶晶振
- 嘉硕晶振
- 津绽晶振
- 玛居礼晶振
- 富士晶振
- SMI晶振
- Lihom晶振
- SHINSUNG晶振
- NAKA晶振
- AKER晶振
- NKG晶振
- NJR晶振
- Sunny晶振
贴片晶振
SMDcrystal
- CTS晶振
- 微晶晶振
- 瑞康晶振
- 康纳温菲尔德晶振
- 高利奇晶振
- Jauch晶振
- AbraconCrystal晶振
- 维管晶振
- ECScrystal晶振
- 日蚀晶振
- 拉隆晶振
- 格林雷晶振
- SiTimeCrystal晶振
- IDTcrystal晶振
- PletronicsCrystal晶振
- StatekCrystal晶振
- AEK晶振
- AEL晶振
- Cardinal晶振
- Crystek晶振
- Euroquartz晶振
- Fox晶振
- Frequency晶振
- GEYER晶振
- KVG晶振
- ILSI晶振
- Mmdcomp晶振
- MtronPTI晶振
- QANTEK晶振
- QuartzCom晶振
- Quarztechnik晶振
- Suntsu晶振
- Transko晶振
- Wi2Wi晶振
- ITTI晶振
- Oscilent晶振
- ACT晶振
- Rubyquartz晶振
- MTI-milliren晶振
- PDI晶振
- IQD晶振
- Microchip晶振
- Silicon晶振
- Anderson晶振
- Fortiming晶振
- CORE晶振
- NIPPON晶振
- NIC晶振
- QVS晶振
- Bomar晶振
- Bliley晶振
- GED晶振
- FILTRONETICS晶振
- STD晶振
- Q-Tech晶振
- Wenzel晶振
- NEL晶振
- EM晶振
- PETERMANN晶振
- FCD-Tech晶振
- HEC晶振
- FMI晶振
- Macrobizes晶振
- AXTAL晶振
- ARGO晶振
- 瑞萨renesas晶振
- Skyworks晶振

手机版















