Q-Tech太空级多输出CMOS振荡器突破极端环境的时钟基准技术
Q-Tech太空级多输出CMOS振荡器突破极端环境的时钟基准技术
太空环境对振荡器的威胁主要来自三个维度:宇宙辐射导致的器件性能衰退,极端温度循环引发的频率漂移,发射阶段强冲击造成的结构损伤.传统地面级振荡器在太空中的失效率高达87%,而Q-Tech通过"材料-结构-电路"三位一体的设计策略,构建了太空级多输出CMOS时钟振荡器的技术壁垒.在抗辐射设计方面,Q-Tech晶振代理商采用辐射加固(Rad-Hard)工艺与抗单粒子效应(SEE)结构.以QT2021系列为例,其核心微控制器与数字补偿电路均采用特种工艺制造,总剂量辐射耐受能力达到50krad(Si),单粒子锁定(SEL)阈值≥75MeV-cm²/mg,远超NASA对近地轨道卫星的40krad(Si)辐射要求.这种设计可有效抵御范艾伦辐射带中的高能质子与电子冲击,避免时钟信号因辐射导致的瞬时中断或永久失效.对于更遥远的深空探测任务(如火星探测),Q-Tech还可提供定制化的QT625S/725S系列SAW振荡器,其辐射耐受能力提升至300krad(Si),满足地球同步轨道(GEO)及以外的极端辐射环境需求.
Q-Tech太空级多输出CMOS振荡器突破极端环境的时钟基准技术
SG3225CAN 25.0000M-TJGA6 | EPSON | SG3225CAN | XO | 25 MHz | CMOS | 1.8V ~ 3.3V | ±50ppm |
SG7050CAN 25.000000M-TJGA0 | EPSON | SG7050CAN | XO | 25 MHz | CMOS | 3.3V | ±50ppm |
SG7050CAN 12.000000M-TJGA0 | EPSON | SG7050CAN | XO | 12 MHz | CMOS | 1.8V ~ 3.3V | ±50ppm |
SG7050CCN 20.000000M-HJGA0 | EPSON | SG7050CCN | XO | 20 MHz | CMOS | 5V | ±50ppm |
TG2520SMN 26.0000M-ECGNNM5 | EPSON | TG2520SMN | TCXO | 26 MHz | Clipped Sine Wave | 1.8V | ±500ppb |
SG-615P 22.1184MC0:ROHS | EPSON | SG-615 | XO | 22.1184 MHz | CMOS, TTL | 5V | ±100ppm |
SG-310SCF 48.0000MC3 | EPSON | SG-310 | XO | 48 MHz | CMOS | 3.3V | ±100ppm |
SG-310SDF 25.0000MB3 | EPSON | SG-310 | XO | 25 MHz | CMOS | 2.5V | ±50ppm |
SG-210STF 20.0000ML | EPSON | SG-210STF | XO | 20 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG-615P 7.3728MC0:ROHS | EPSON | SG-615 | XO | 7.3728 MHz | CMOS, TTL | 5V | ±100ppm |
VG-4231CE 27.0000M-PSCM0 | EPSON | VG-4231CE | VCXO | 27 MHz | CMOS | 3.3V | ±37ppm |
SG7050CAN 24.576000M-TJGA3 | EPSON | SG7050CAN | XO | 24.576 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 12.000000M-TJGA3 | EPSON | SG7050CAN | XO | 12 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 48.000000M-TJGA3 | EPSON | SG7050CAN | XO | 48 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 25.000000M-TJGA3 | EPSON | SG7050CAN | XO | 25 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 48.000000M-TJGAB | EPSON | SG7050CAN | XO | 48 MHz | CMOS | 3.3V | ±50ppm |
SG7050CAN 8.000000M-TJGA3 | EPSON | SG7050CAN | XO | 8 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 10.000000M-TJGA3 | EPSON | SG7050CAN | XO | 10 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 27.000000M-TJGA3 | EPSON | SG7050CAN | XO | 27 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CAN 24.000000M-TJGA3 | EPSON | SG7050CAN | XO | 24 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
TG2016SMN 26.0000M-ECGNNM0 | EPSON | TG2016SMN | TCXO | 26 MHz | Clipped Sine Wave | 1.8V | ±500ppb |
SG3225EAN 100.000000M-KEGA0 | EPSON | SG3225EAN | XO | 100 MHz | LVPECL | 2.5V ~ 3.3V | ±30ppm |
SG5032VAN 156.250000M-KJGA0 | EPSON | SG5032VAN | XO | 156.25 MHz | LVDS | 2.5V ~ 3.3V | ±50ppm |
SG3225VAN 100.000000M-KEGA0 | EPSON | SG3225VAN | XO | 100 MHz | LVDS | 2.5V ~ 3.3V | ±30ppm |
SG3225VAN 156.250000M-KEGA0 | EPSON | SG3225VAN | XO | 156.25 MHz | LVDS | 2.5V ~ 3.3V | ±30ppm |
TG2520SMN 27.0000M-MCGNNM3 | EPSON | TG2520SMN | TCXO | 27 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb |
SG-615P 12.0000MC3: ROHS | EPSON | SG-615 | XO | 12 MHz | CMOS, TTL | 5V | ±100ppm |
SG-615P 8.0000MC3: ROHS | EPSON | SG-615 | XO | 8 MHz | CMOS, TTL | 5V | ±100ppm |
SG-615P 16.0000MC3: ROHS | EPSON | SG-615 | XO | 16 MHz | CMOS, TTL | 5V | ±100ppm |
SG3225EAN 250.000000M-KEGA3 | EPSON | SG3225EAN | XO | 250 MHz | LVPECL | 2.5V ~ 3.3V | ±30ppm |
SG7050EAN 125.000000M-KEGA3 | EPSON | SG7050 | XO | 125 MHz | LVPECL | 2.5V ~ 3.3V | ±30ppm |
SG7050EAN 250.000000M-KEGA3 | EPSON | SG7050 | XO | 250 MHz | LVPECL | 2.5V ~ 3.3V | ±30ppm |
SG7050EAN 200.000000M-KEGA3 | EPSON | SG7050 | XO | 200 MHz | LVPECL | 2.5V ~ 3.3V | ±30ppm |
SG-8002CA 25.0000M-PCCL3 | EPSON | SG-8002 | XO | 25 MHz | CMOS | 3.3V | ±100ppm |
SG-8002CA 4.0000M-PCCL3 | EPSON | SG-8002 | XO | 4 MHz | CMOS | 3.3V | ±100ppm |
VG-4231CA 25.0000M-FGRC3 | EPSON | VG-4231CA | VCXO | 25 MHz | CMOS | 3.3V | ±50ppm |
TG-3541CE 32.7680KXB3 | EPSON | TG-3541CE | TCXO | 32.768 kHz | CMOS | 1.5V ~ 5.5V | - |
TG2016SMN 27.0000M-MCGNNM3 | EPSON | TG2016SMN | TCXO | 27 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb |
TG2016SMN 38.4000M-MCGNNM3 | EPSON | TG2016SMN | TCXO | 38.4 MHz | Clipped Sine Wave | 2.8V ~ 3.3V | ±500ppb |
SG5032CBN 80.000000M-TJGA3 | EPSON | SG5032CBN | XO | 80 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG3225VAN 100.000000M-KEGA3 | EPSON | SG3225VAN | XO | 100 MHz | LVDS | 2.5V ~ 3.3V | ±30ppm |
XG-1000CA 156.2500M-DBL3 | EPSON | XG-1000CA | SO SAW | 156.25 MHz | CMOS | 2.5V | ±50ppm |
SG3225VAN 80.000000M-KEGA3 | EPSON | SG3225VAN | XO | 80 MHz | LVDS | 2.5V ~ 3.3V | ±30ppm |
XG-1000CB 125.0000M-DBL3 | EPSON | XG-1000CB | SO SAW | 125 MHz | CMOS | 2.5V | ±50ppm |
SG3225VEN 156.250000M-DJGA0 | EPSON | SG3225VEN | XO | 156.25 MHz | LVDS | 2.5V | ±50ppm |
SG3225EEN 156.250000M-CJGA0 | EPSON | SG3225EEN | XO | 156.25 MHz | LVPECL | 3.3V | ±50ppm |
XG-2102CA 100.0000M-LGPAL3 | EPSON | XG-2102CA | SO SAW | 100 MHz | LVDS | 3.3V | ±50ppm |
SG3225HBN 156.250000M-CJGA3 | EPSON | SG3225HBN | XO | 156.25 MHz | HCSL | 3.3V | ±50ppm |
EG-2121CA 125.0000M-PHPAL3 | EPSON | EG-2121CA | SO SAW | 125 MHz | LVPECL | 2.5V | ±100ppm |
SG3225VEN 125.000000M-DJHA3 | EPSON | SG3225VEN | XO | 125 MHz | LVDS | 2.5V | ±50ppm |
SG3225EEN 200.000000M-CLGA3 | EPSON | SG3225EEN | XO | 200 MHz | LVPECL | 3.3V | ±100ppm |
EG-2121CA 156.2500M-PGPAL3 | EPSON | EG-2121CA | SO SAW | 156.25 MHz | LVPECL | 2.5V | ±50ppm |
SG-210STF 48.0000ML | EPSON | SG-210STF | XO | 48 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
SG7050CCN 10.000000M-HJGA3 | EPSON | SG7050 | XO | 10 MHz | CMOS | 4.5V ~ 5.5V | ±50ppm |
EG-2121CA 125.0000M-LHPAB | EPSON | EG-2121CA | SO SAW | 125 MHz | LVDS | 2.5V | ±100ppm |
EG-2121CA 200.0000M-LGPNB | EPSON | EG-2121CA | SO SAW | 200 MHz | LVDS | 2.5V | ±50ppm |
EG-2121CA 100.0000M-LGPAB | EPSON | EG-2121CA | SO SAW | 100 MHz | LVDS | 2.5V | ±50ppm |
EG-2121CA 200.0000M-LGPAB | EPSON | EG-2121CA | SO SAW | 200 MHz | LVDS | 2.5V | ±50ppm |
SG5032CCN 3.276800M-HJGA3 | EPSON | SG5032 | XO | 3.2768 MHz | CMOS | 4.5V ~ 5.5V | ±50ppm |
SG5032CAN 4.000000M-TJGA3 | EPSON | SG5032 | XO | 4 MHz | CMOS | 1.6V ~ 3.6V | ±50ppm |
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