KT2016K26000AEU28T,日本进口京瓷晶振,KT2016K小型表面贴装晶振

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KT2016K26000AEU28T,日本进口京瓷晶振,KT2016K小型表面贴装晶振

日本京瓷在晶体材料研发与制造工艺上拥有数十年的技术沉淀,KT2016K26000AEU28T作为其旗下产品,充分继承了京瓷对品质的严苛追求.在核心材料方面,该晶振采用高纯度石英晶体作为谐振单元,这种材料具有稳定的物理特性,能够在不同环境条件下保持稳定的谐振频率,为晶振的高精度输出奠定了基础.在频率精度上,KT2016K26000AEU28T表现出色,其标称频率为26MHz,频率偏差能够控制在极小范围(通常可达到±10ppm以内),确保为电子设备提供精准的时钟信号.这一特性在通信设备中尤为重要,例如在4G/5G移动终端中,精准的时钟信号是保障射频模块,基带芯片协同工作的关键,能够有效减少信号传输中的误码率,提升通信质量.
此外,京瓷通过先进的封装工艺与可靠性测试,使KT2016K26000AEU28T有源晶振具备优异的环境适应性.在温度稳定性方面,该晶振能够在-40℃至+85℃的宽温范围内稳定工作,即使在极端温度变化下,频率漂移也能得到有效控制；在抗振动与抗冲击性能上,经过严格测试,其可承受一定强度的机械应力,满足汽车电子,工业控制等领域对元器件可靠性的要求.同时,晶振的密封性设计使其具备良好的抗潮湿,抗腐蚀能力,能够在多尘,高湿等复杂环境中保持长期稳定运行.

KT2016K26000AEU28T,日本进口京瓷晶振,KT2016K小型表面贴装晶振

原厂型号Original model ：	KT2016K26000AEU28T	品牌 brand ：	Cardinal晶振
Manufacturer品牌	京瓷晶振	Operating Temperature温度	-20 ~ +75°C
Series型号	KT2016K	Current - Supply (Max)	-
Type 类型	TCXO	Package Height高度	0.8mm
Frequency 频率	26M	Termination脚位	4 pads
输出方式Output：	削峰正弦波	Package Type封装类型	4-SMD
Voltage - Supply电压	2.8V	Packaging包装	Tape and Reel
Frequency Stability频率稳定度	±0.5ppm	安装方式Installation ：	Surface mount
Size / Dimension 尺寸	2016进口贴片	最小包装数 MPQ ：	3000

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KT2016K26000AEU28T,日本进口京瓷晶振,KT2016K小型表面贴装晶振

KT2016K

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KT2016K26000AEU28T,日本进口京瓷晶振,KT2016K小型表面贴装晶振

KC2016K1.50000C10E00	2.0 x 1.6mm	0.8	1.5	-10	70	± 50	CMOS
KC2016K1.50000C16E00	2.0 x 1.6mm	0.8	1.5	-40	105	± 50	CMOS
KC2016K1.50000C1GE00	2.0 x 1.6mm	0.8	1.5	-40	85	± 50	CMOS
KC2016K1.50000C1SE00	2.0 x 1.6mm	0.8	1.5	-10	70	± 30	CMOS
KC2016K1.50000C1UE00	2.0 x 1.6mm	0.8	1.5	-10	70	± 25	CMOS
KC2016K1.84320C10E00	2.0 x 1.6mm	0.8	1.8432	-10	70	± 50	CMOS
KC2016K1.84320C16E00	2.0 x 1.6mm	0.8	1.8432	-40	105	± 50	CMOS
KC2016K1.84320C1GE00	2.0 x 1.6mm	0.8	1.8432	-40	85	± 50	CMOS
KC2016K1.84320C1SE00	2.0 x 1.6mm	0.8	1.8432	-10	70	± 30	CMOS
KC2016K1.84320C1UE00	2.0 x 1.6mm	0.8	1.8432	-10	70	± 25	CMOS
KC2016K10.0000C10E00	2.0 x 1.6mm	0.8	10	-10	70	± 50	CMOS
KC2016K10.0000C16E00	2.0 x 1.6mm	0.8	10	-40	105	± 50	CMOS
KC2016K10.0000C1GE00	2.0 x 1.6mm	0.8	10	-40	85	± 50	CMOS
KC2016K10.0000C1SE00	2.0 x 1.6mm	0.8	10	-10	70	± 30	CMOS
KC2016K10.0000C1UE00	2.0 x 1.6mm	0.8	10	-10	70	± 25	CMOS
KC2016K10.2400C10E00	2.0 x 1.6mm	0.8	10.24	-10	70	± 50	CMOS
KC2016K10.2400C16E00	2.0 x 1.6mm	0.8	10.24	-40	105	± 50	CMOS
KC2016K10.2400C1GE00	2.0 x 1.6mm	0.8	10.24	-40	85	± 50	CMOS
KC2016K10.2400C1SE00	2.0 x 1.6mm	0.8	10.24	-10	70	± 30	CMOS
KC2016K10.2400C1UE00	2.0 x 1.6mm	0.8	10.24	-10	70	± 25	CMOS
KC2016K10.5554C10E00	2.0 x 1.6mm	0.8	10.5554	-10	70	± 50	CMOS
KC2016K10.5554C16E00	2.0 x 1.6mm	0.8	10.5554	-40	105	± 50	CMOS
KC2016K10.5554C1GE00	2.0 x 1.6mm	0.8	10.5554	-40	85	± 50	CMOS
KC2016K10.5554C1SE00	2.0 x 1.6mm	0.8	10.5554	-10	70	± 30	CMOS
KC2016K10.5554C1UE00	2.0 x 1.6mm	0.8	10.5554	-10	70	± 25	CMOS
KC2016K100.000C10E00	2.0 x 1.6mm	0.8	100	-10	70	± 50	CMOS
KC2016K100.000C16E00	2.0 x 1.6mm	0.8	100	-40	105	± 50	CMOS
KC2016K100.000C1GE00	2.0 x 1.6mm	0.8	100	-40	85	± 50	CMOS
KC2016K100.000C1SE00	2.0 x 1.6mm	0.8	100	-10	70	± 30	CMOS
KC2016K100.000C1UE00	2.0 x 1.6mm	0.8	100	-10	70	± 25	CMOS
KC2016K11.2896C10E00	2.0 x 1.6mm	0.8	11.2896	-10	70	± 50	CMOS
KC2016K11.2896C16E00	2.0 x 1.6mm	0.8	11.2896	-40	105	± 50	CMOS
KC2016K11.2896C1GE00	2.0 x 1.6mm	0.8	11.2896	-40	85	± 50	CMOS
KC2016K11.2896C1SE00	2.0 x 1.6mm	0.8	11.2896	-10	70	± 30	CMOS
KC2016K11.2896C1UE00	2.0 x 1.6mm	0.8	11.2896	-10	70	± 25	CMOS
KC2016K12.0000C10E00	2.0 x 1.6mm	0.8	12	-10	70	± 50	CMOS
KC2016K12.0000C16E00	2.0 x 1.6mm	0.8	12	-40	105	± 50	CMOS
KC2016K12.0000C1GE00	2.0 x 1.6mm	0.8	12	-40	85	± 50	CMOS
KC2016K12.0000C1SE00	2.0 x 1.6mm	0.8	12	-10	70	± 30	CMOS
KC2016K12.0000C1UE00	2.0 x 1.6mm	0.8	12	-10	70	± 25	CMOS
KC2016K12.2880C10E00	2.0 x 1.6mm	0.8	12.288	-10	70	± 50	CMOS
KC2016K12.2880C16E00	2.0 x 1.6mm	0.8	12.288	-40	105	± 50	CMOS
KC2016K12.2880C1GE00	2.0 x 1.6mm	0.8	12.288	-40	85	± 50	CMOS
KC2016K12.2880C1SE00	2.0 x 1.6mm	0.8	12.288	-10	70	± 30	CMOS
KC2016K12.2880C1UE00	2.0 x 1.6mm	0.8	12.288	-10	70	± 25	CMOS
KC2016K12.4560C10E00	2.0 x 1.6mm	0.8	12.456	-10	70	± 50	CMOS
KC2016K12.4560C16E00	2.0 x 1.6mm	0.8	12.456	-40	105	± 50	CMOS
KC2016K12.4560C1GE00	2.0 x 1.6mm	0.8	12.456	-40	85	± 50	CMOS
KC2016K12.4560C1SE00	2.0 x 1.6mm	0.8	12.456	-10	70	± 30	CMOS
KC2016K12.4560C1UE00	2.0 x 1.6mm	0.8	12.456	-10	70	± 25	CMOS
KC2016K12.5000C10E00	2.0 x 1.6mm	0.8	12.5	-10	70	± 50	CMOS
KC2016K12.5000C16E00	2.0 x 1.6mm	0.8	12.5	-40	105	± 50	CMOS
KC2016K12.5000C1GE00	2.0 x 1.6mm	0.8	12.5	-40	85	± 50	CMOS
KC2016K12.5000C1SE00	2.0 x 1.6mm	0.8	12.5	-10	70	± 30	CMOS
KC2016K12.5000C1UE00	2.0 x 1.6mm	0.8	12.5	-10	70	± 25	CMOS
KC2016K125.000C10E00	2.0 x 1.6mm	0.8	125	-10	70	± 50	CMOS
KC2016K125.000C16E00	2.0 x 1.6mm	0.8	125	-40	105	± 50	CMOS
KC2016K125.000C1GE00	2.0 x 1.6mm	0.8	125	-40	85	± 50	CMOS
KC2016K125.000C1SE00	2.0 x 1.6mm	0.8	125	-10	70	± 30	CMOS
KC2016K125.000C1UE00	2.0 x 1.6mm	0.8	125	-10	70	± 25	CMOS